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NA-E135G5

Tandem structure with an amorphous and a microcrystalline silicon layer offering a stabilised module efficiency of 9.6%
Two glass layers laminated with a high performing vapor barrier encapsulant
Aesthetic design for many applications
Low temperature coefficients enabling higher energy yields per watt at high temperatures
Less dirt accumulation due to frameless design
Installation in landscape or portrait mode
One bypass diode integrated in the junction box
No Cadmium – RoHS compliant

Tandem structure with an amorphous and a microcrystalline silicon layer offering a stabilised module efficiency of 9.6%

	Zellentyp	Tandem cell of amorphous and microcrystalline silicon
	Abmessungen (LxHxB) (mm)	1402x1001x7.4

	Leerlaufspannung Voc (V)	61,3
	Kurzschlussstrom Isc (A)	3,41
	Spannung bei maximaler Leistung Vpm (V)	47,0
	Strom bei maximaler Leistung Ipm (A)	2,88
	Maximal zulässige Systemspannung (V DC)	1000

	αPm (%/°C)	-0,24
	αIsc (%/°C)	0,07
	αVoc (%/°C)	-0,30
	Betriebstemperatur (°C)	-40 to +90
	Lagerungstemperatur (°C)	-40 to +90
	Lagerungsluftfeuchtigkeit (%)	-